EPC Space Rad Hard GaN discrete devices have been specifically designed for critical applications in the high reliability or commercial satellite space environments. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable higher power densities, higher efficiencies and more compact and lighter packaging.
Rad Hard GaN Die on Ceramic Adaptor
The CDA series of eGaN® switching power HEMTs from EPC Space have been specifically designed for critical applications in high reliability or commercial satellite space environments. The die adaptor series allows easy PCB mounting for ‘plug and play’ functionality. The low RDS(on) and very low gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact and lighter weight circuitry for critical space borne missions.
Rad Hard GaN Drivers and Power stages
EPC Space Rad Hard GaN Drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems. Rad Hard Power Stages integrate a high-speed gate drive circuit with power switches to provide a complete power stage in a small package. These devices are ideal for high speed DC-DC conversion, synchronous rectification, and multi-phase motor drives.